Light-emitting module structure

ABSTRACT

A light-emitting module structure includes a substrate, a plurality of light-emitting diodes (LEDs) disposed on the substrate, and a light-guiding layer covering the light-emitting diodes. The light-guiding layer has an upper surface, the upper surface has a plurality of recesses, and the recesses are above the light-emitting diodes or between the light-emitting diodes. This light-emitting module structure can improve the brightness and uniformity of the light-emitting module.

CROSS-REFERENCE TO RELATED APPLICATION

The present application is a Divisional Application of the U.S.application Ser. No. 16/373,651, filed Apr. 3, 2019, which claimspriority to China Application Serial Number 201810354383.0, filed Apr.19, 2018, all of which are herein incorporated by their entireties.

BACKGROUND Field of Invention

The present invention relates to a light-emitting module structure.

Description of Related Art

Over recent years, the light-emitting diodes (LEDs) have graduallyreplaced traditional light sources due to its advantages such as smallvolume, high brightness, and low power consumption. Currently, the LEDhas been widely applied to back light modules. Conventional direct-typeback light modules mostly use frame type package, which has smalllight-emitting angle and low light-emitting efficiency. Furthermore, theconventional back light module has relatively short light transmissionpath. When a distance between the light-emitting diodes is too long, adark zone will be formed between the light-emitting diodes, resulting inpoor visual perception. The aforementioned issues may be improved byreducing the distance between the light-emitting diodes, but the numberof the light-emitting diodes is inevitably increased while the distanceis reduced, causing an increase of cost.

Therefore, there is a demand for a light-emitting module structure tosolve the issues aforementioned.

SUMMARY

According to various embodiments of the present invention, alight-emitting module structure is provided. The light-emitting modulestructure includes a substrate, a plurality of light-emitting diodesdisposed on the substrate, and a light-guiding layer covering thelight-emitting diodes. The light-guiding layer has an upper surfacewhich has a plurality of recesses positioned above the light-emittingdiodes.

According to some embodiments of the present invention, thelight-emitting module structure further includes a plurality ofcrosstalk resistant structures disposed on the substrate, and each ofthe crosstalk resistant structures is between the light-emitting diodes.

According to some embodiments of the present invention, thelight-emitting module structure further includes a plurality ofscattering structures located on the substrate, and each of thescattering structures is arranged between two adjacent light-emittingdiodes and disposed on two opposite sides of the each of the crosstalkresistant structures.

According to some embodiments of the present invention, thelight-emitting module structure further includes a plurality ofreflection structures disposed on the substrate, and each of thereflection structures is arranged between two adjacent light-emittingdiodes and disposed on two opposite sides of the crosstalk resistantstructures.

According to some embodiments of the present invention, thelight-emitting diodes are arranged as a regular hexagon, and each of thecrosstalk resistant structures is positioned at a center of the regularhexagon.

According to some embodiments of the present invention, the crosstalkresistant structures include a plurality of cones or a plurality ofcylinders, and each of the crosstalk resistant structures has a heightwhich is greater than or equal to a height of the light-emitting diode.

According to some embodiments of the present invention, each of therecesses has an opening and a bottom, each of the openings has a width,each of the bottoms is aligned with each of the light-emitting diodes, avertical distance is between each of the aligned bottoms and thelight-emitting diodes, and the ratio of the width to the verticaldistance is about 0.85-3.5.

According to some embodiments of the present invention, thelight-emitting module structure further includes at least one reflectionstructure disposed on a part of the upper surface of the light-guidinglayer, where the reflection structure has a reflection surfaceimmediately neighboring the upper surface, and the reflection surface isa scattering reflection surface or mirror reflection surface.

According to some embodiments of the present invention, the recessesinclude cone recesses or cylindrical recesses.

According to some embodiments of the present invention, the recessesinclude a plurality of first V-shaped trenches extending along a firstdirection.

According to some embodiments of the present invention, the recessesfurther include a plurality of second V-shaped trenches extending alonga second direction, the second direction is different from the firstdirection, and the first V-shaped trenches intersect with the secondV-shaped trenches to form a plurality of intersections.

According to some embodiments of the present invention, thelight-emitting module structure further includes a phosphor layer orquantum dot layer on the upper surface of the light-guiding layer.

According to some embodiments of the present invention, thelight-emitting module structure further includes a phosphor layercovering at least one of the light-emitting diodes.

According to some embodiments of the present invention, the uppersurface of the light-guiding layer is a reflection surface or arefraction surface.

According to some embodiments of the present invention, thelight-emitting module structure further includes a concave structuredisposed between the substrate and each of the light-emitting diodes.

According to some embodiments of the present invention, thelight-emitting module structure further includes a transparent gluelayer disposed on the upper surface of the light-guiding layer, and thetransparent glue layer fills the recesses.

According to some embodiments of the present invention, the transparentglue layer in the recesses has a protruding glue accumulation portion.

According to some embodiments of the present invention, the substratehas at least one cavity, and at least one of the light-emitting diodesis correspondingly disposed in the at least one cavity, where thelight-emitting diodes are chip size package light-emitting diodes.

According to various embodiments of the present invention, alight-emitting module structure is provided. The light-emitting modulestructure includes a substrate, a plurality of light-emitting diodesdisposed on the substrate, and a light-guiding layer covering thelight-emitting diodes. The light-guiding layer has an upper surface, theupper surface has a plurality of recesses, and each of the recesses isbetween the light-emitting diodes.

According to some embodiments of the present invention, thelight-emitting module structure further includes a plurality ofcrosstalk resistant structures disposed on the substrate, and the eachof the crosstalk resistant structures is between the light-emittingdiodes.

According to some embodiments of the present invention, thelight-emitting module structure further includes a plurality ofscattering structures disposed on the substrate, and each of thescattering structures is arranged between two adjacent light-emittingdiodes and disposed on two opposite sides of each of the crosstalkresistant structures.

According to some embodiments of the present invention, thelight-emitting module structure further includes a plurality ofreflection structures disposed on the substrate, and each of thereflection structures is arranged between two adjacent light-emittingdiodes and disposed on two opposite sides of each of the crosstalkresistant structures.

According to some embodiments of the present invention, thelight-emitting diodes are arranged as a regular hexagon, and each of thecrosstalk resistant structures is positioned at a center of the regularhexagon.

According to some embodiments of the present invention, the crosstalkresistant structures include a plurality of cones or a plurality ofcylinders, and each of the crosstalk resistant structures has a heightwhich is greater than or equal to a height of each of the light-emittingdiode.

According to some embodiments of the present invention, thelight-emitting module structure further includes at least one reflectionstructure disposed on a part of the upper surface of the light-guidinglayer, where the reflection structure has a reflection surfaceimmediately neighboring the upper surface, and the reflection surface isa scattering reflection surface or mirror reflection surface.

According to some embodiments of the present invention, the recessesinclude a plurality of first V-shaped trenches extending along a firstdirection.

According to some embodiments of the present invention, the recessesfurther include a plurality of second V-shaped trenches extending alonga second direction, the second direction is different from the firstdirection, and the first V-shaped trenches intersect with the secondV-shaped trenches to form a plurality of intersections.

According to some embodiments of the present invention, thelight-emitting module structure further includes a transparent gluelayer disposed on the upper surface of the light-guiding layer, and thetransparent glue layer fills the recesses.

According to some embodiments of the present invention, the transparentglue layer in the recesses has a protruding glue accumulation portion.

According to some embodiments of the present invention, the substratehas at least one cavity, and at least one of the light-emitting diodesis correspondingly disposed in the at least one cavity, where thelight-emitting diodes are chip size package light-emitting diodes.

It is to be understood that both the foregoing general description andthe following detailed description are by examples, and are intended toprovide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a cross-sectional view of a light-emitting module structureaccording to various embodiments of the present invention.

FIGS. 2A-2B are cross-sectional views of recesses of the light-emittingmodule structure according to some embodiments of the present invention.

FIGS. 3A-3B are schematic top views of a light-guiding layer accordingto some embodiments of the present invention.

FIGS. 4A-4B are schematic views showing arrangement of recessesaccording to some embodiments of the present invention.

FIG. 5 is a schematic top view of a light-emitting module structureaccording to some embodiments of the present invention.

FIG. 6 is a cross-sectional view of a light-emitting module structureaccording to various embodiments of the present invention.

FIGS. 7A-7D are photos of a light-emitting module structure according tosome embodiments of the present invention.

FIGS. 8-11 are cross-sectional views of a light-emitting modulestructure according to various embodiments of the present invention.

FIGS. 12A-12B are partially enlarged schematic views of a light-emittingmodule structure according to some embodiments of the present invention.

FIG. 13 is a cross-sectional view of a light-emitting module structureaccording to various embodiments of the present invention.

FIG. 14 is a cross-sectional view of a light-emitting module structureaccording to various embodiments of the present invention.

DETAILED DESCRIPTION

The following embodiments are disclosed with accompanying diagrams fordetailed description. For illustration clarity, many details of practiceare explained in the following descriptions. However, it should beunderstood that these details of practice do not intend to limit thepresent invention. That is, these details of practice are not necessaryin parts of embodiments of the present invention. Furthermore, forsimplifying the drawings, some of the conventional structures andelements are shown with schematic illustrations.

The relative terms, such as “lower” or “bottom” and “upper” or “top”,may be used herein to describe one element's relationship to anotherelement as illustrated in the Figures. It will be understood thatrelative terms are intended to encompass different orientations of thedevice in addition to the orientation depicted in the Figures. Forexample, if the device in one of the figures is turned over, elementsdescribed as being on the “lower” side of other elements would then beoriented on “upper” sides of the other elements. The exemplary term“lower”, can therefore, encompasses both an orientation of “lower” and“upper”, depending of the particular orientation of the figure.Similarly, if the device in one of the figures is turned over, elementsdescribed as “below” or “beneath” other elements would then be oriented“above” the other elements. The exemplary terms “below” or “beneath”can, therefore, encompass both an orientation of above and below.

FIG. 1 is a cross-sectional view of a light-emitting module structure100 depicted according to some embodiments of the present invention.Referring to FIG. 1, the light-emitting module structure 100 includes asubstrate 110, a plurality of light-emitting diodes (e.g.,light-emitting diodes 120 a, 120 b) and a light-guiding layer 130. Thelight-emitting diodes 120 a and 120 b are disposed on the substrate 110.The light-guiding layer 130 covers the light-emitting diodes 120 a and120 b. The light-emitting module structure 100 may further includesother elements which will be described below.

The substrate 110 may include any suitable substrate. In someembodiments, the substrate 110 may be a transparent substrate or anopaque substrate. In some embodiments, the substrate 110 may be aflexible substrate. Therefore, the light-emitting module structure 100may be applied to a light-emitting module of a highly-curved back lightform. In other embodiments, the substrate 110 may be a rigid substrate.For example, the substrate 110 may be but not limited to a sapphiresubstrate, a silicon substrate, a glass substrate, a printed circuitboard, a metal substrate, or a ceramic substrate. In some embodiments,the substrate 110 may further include a conductive structure (not shownin FIG. 1). In some embodiments, the substrate 110 may be electricallyconnected to the light-emitting diodes 120 a and 120 b via theconductive structure (not shown in FIG. 1).

The light-emitting diodes 120 a and 120 b may be light-emitting diodesof any light-emitting wavelengths. In some embodiments, thelight-emitting diodes 120 a and 120 b may be the same light-emittingdiodes. For example, the light-emitting diodes 120 a and 120 b are bothblue light-emitting diodes. In other embodiments, the light-emittingdiodes 120 a and 120 b may be the different light-emitting diodes. Forexample, the light-emitting diode 120 a is a blue light-emitting diode,while the light-emitting diode 120 b is an ultraviolet light-emittingdiode. The light-emitting diodes 120 a and 120 b may be light-emittingdiodes of any size. In some embodiments, the light-emitting diodes 120 aand 120 b may be Mini light-emitting diodes (Mini LEDs). For example,the size of the light-emitting diodes 120 a and 120 b may be about 100μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, or 400 μm. In otherembodiments, the light-emitting diodes 120 a and 120 b may be microlight-emitting diodes (Micro LEDs). For example, the die sizes of thelight-emitting diodes 120 a and 120 b may be respectively about 30 μm,40 μm, 50 μm, 60 μm, 70 μm, 80 μm, or 90 μm. In some embodiments, thelight-emitting diodes 120 a and 120 b may be chip size package (CSP)light-emitting diodes or flip chip light-emitting diodes.

In some embodiments, the light-guiding layer 130 includes any suitabletransparent glue materials. In some embodiments, the light-guiding layer130 has a refractive index from about 1.49 to about 1.6. For example,the light-guiding layer 130 may be but not limited to a silicone resin.In some embodiments, the upper surface 132 of the light-guiding layer130 has recesses 140 a and 140 b, as shown in FIG. 1. The recesses 140 aand 140 b are respectively positioned above the light-emitting diodes120 a and 120 b. In some embodiments, the upper surface 132 of thelight-guiding layer 130 may not have recesses 140 a or 140 b. Forexample, the upper surface 132 of the light-guiding layer 130 may be aglossy transparent surface. In some embodiments, the upper surface 132of the light-guiding layer 130 is a reflection surface and/or refractionsurface. The upper surface 132 of the light-guiding layer 130 mayreflect and/or refract lights emitted from the light-emitting diodes120.

As shown in FIG. 1, the upper surface 132 of the light-guiding layer 130has the recesses 140 a and 140 b, and the recesses 140 a and 140 b arerespectively above the light-emitting diodes 120 a and 120 b. Therecesses 140 a and 140 b may change a total reflection angle of a lightin the light-guiding layer 130, such that the light may be distributeduniformly. The recess 140 a has an opening width W_(1a) and a bottom 142a, and the recess 140 b has an opening width W_(1b) and a bottom 142 b.In some embodiments, the bottom 142 a of the recess 140 a is alignedwith the light-emitting diode 120 a, and the bottom 142 b of the recess140 b is aligned with the light-emitting diode 120 b. In someembodiments, there is a vertical distance D_(1a) between the bottom 142a and the light-emitting diode 120 a, and the ratio of the opening widthW_(1a) to the vertical distance D_(1a) is from about 0.85 to 3.5, suchas 0.9, 1.2, 1.5, 2.0, 2.2, 2.5, 2.7, 3.0, or 3.2. In some embodiments,there is a vertical distance D_(1b) between the bottom 142 b and thelight-emitting diode 120 b, and the ratio of the opening width W_(1b) tothe vertical distance D_(ib) is from about 0.85 to 3.5, such as 0.9,1.2, 1.5, 2.0, 2.2, 2.5, 2.7, 3.0, or 3.2. In some embodiments, theopening widths W_(1a) and W_(1b) of the recess 140 a and 140 b may bethe same or different. It should be understood that although FIG. 1merely depicts two light-emitting diodes 120 a, 120 b and two recesses140 a, 140 b, the present invention is not limited thereto, and asuitable number of light-emitting diodes 120 and recesses 140 a and 140b may be selected as required.

Please refer to FIGS. 2A-2B. FIGS. 2A-2B are cross-sectional views ofrecesses 140 a and 140 b of the light-emitting module structure 100depicted according to some embodiments of the present invention. In someembodiments, the recesses 140 a and 140 b may be but not limited to conerecesses (as shown in FIG. 2A) or cylindrical recesses (as shown in FIG.2B). The recesses 140 a, 140 b has the bottoms 142 a, 142 b and beveledges 143 a, 143 b. In some embodiments, the bottoms 142 a and 142 b ofthe recesses 140 a and 140 b may be planes, as shown in FIG. 2B. Inother embodiments, the bottoms 142 a and 142 b may be protruded orrecessed arcs (not shown in FIG. 2A-2B). In some embodiments, as shownin FIG. 2B, top widths W₂ of the recesses 140 a and 140 b may be greaterthan bottom widths W₃ of the recesses 140. In some embodiments, anincluded angle θ is between the bevel edges 143 a, 143 b of the recesses140 a, 140 b and a normal line which is perpendicular to the bottoms 142a, 142 b, as shown in FIG. 2B. In some embodiments, the range of theincluded angle θ is 44°<θ<62°, such that the light may be distributeduniformly. For example, the included angle θ may be 45°, 47°, 50°, 52°,55°, 57°, or 60°.

FIGS. 3A-3B are schematic top views of a light-guiding layer depictedaccording to some embodiments of the present invention. In someembodiments, the recesses include a plurality of first V-shaped trenchesextending along a first direction d1. For example, as shown in FIG. 3A,the light-emitting module structure includes the first V-shaped trenches140 a, 140 b, 140 c, and 140 d extending along the first direction d1.In some embodiments, the recesses further include a plurality of secondV-shaped trenches extending along a second direction d2, which isdifferent from the first direction d1, and the first V-shaped trenchesintersect with the second V-shaped trenches to form a plurality ofintersections. For example, as shown in FIG. 3B, the light-emittingmodule structure includes the first V-shaped trenches 140 a, 140 b, 140c, 140 d extending along the first direction d1, and the second V-shapedtrenches 140 e, 140 f, 140 g, 140 h extending along the second directiond2. The first V-shaped trenches 140 a, 140 b, 140 c, 140 d intersectrespectively with the second V-shaped trenches 140 e, 140 f, 140 g, 140h to form a plurality of intersections 144. In some embodiments, each ofthe intersections 144 may be aligned with one of the light-emittingdiodes 120, respectively.

Please refer to FIGS. 4A-4B. FIGS. 4A-4B are schematic views showingarrangement of the recesses 140 depicted according to some embodimentsof the present invention. In some embodiments, the arrangement of therecesses 140 may include but not limited to a matrix arrangement (asshown in FIG. 4A) or a honeycomb arrangement (as shown in FIG. 4B). Insome embodiments, distances S₁ and S₂ between the recesses 140 are fromabout 2 to 15 mm.

Please refer to FIG. 1 again. In some embodiments, the light-emittingmodule structure 100 may further include at least one crosstalkresistant structure 150 disposed on the substrate 110. In someembodiments, the crosstalk resistant structure 150 is between thelight-emitting diode 120 a and the light-emitting diode 120 b. In someembodiments, the crosstalk resistant structure 150 includes but notlimited to titanium dioxide, silicone resin, or a combination thereof.The crosstalk resistant structure 150 may scatter and/or reflect thelights emitted from the light-emitting diodes 120 a and 120 b, so as toavoid any interference of light. In some embodiments, the crosstalkresistant structure 150 includes but not limited to a cone or acylinder. In some embodiments, a height H₁ of the crosstalk resistantstructure 150 is greater than or equal to a height H₂ of thelight-emitting diode 120. In other embodiments, the light-emittingmodule structure 100 may have no crosstalk resistant structure 150.

FIG. 5 is a schematic top view of a light-emitting module structuredepicted according to some embodiments of the present invention. In someembodiments, the light-emitting diodes 120 may be arranged as a regularhexagon, and the crosstalk resistant structure 150 is positioned at acenter of the regular hexagon. This arrangement enables thelight-emitting module structure to keep a good brightness and uniformitywhile the number of the light-emitting diodes 120 is reduced.

Still referring to FIG. 1, in some embodiments, the light-emittingmodule structure 100 further includes at least one reflection structure160 disposed on a part of the upper surface 132 of the light-guidinglayer 130. The reflection structure 160 has a reflection surface 162immediately neighboring the upper surface 132 of the light-guiding layer130. In some embodiments, the reflection surface 162 may be a scatteringreflection surface or a mirror reflection surface. In some embodiments,the reflection structure 160 includes but not limited to titaniumdioxide, silicon dioxide, or a combination thereof. It should beunderstood that the location, quantity, and size of the reflectionstructure 160 shown in FIG. 1 are merely exemplary, the reflectionstructure 160 may be located anywhere on the upper surface 132 of thelight-guiding layer 130, and the quantity and size of the reflectionstructure 160 may be selected depending on the needed. In otherembodiments, the reflection structure 160 may be omitted.

It should be understood that the relationship between elements and thematerial of the components described above will not be repeatedhereinafter. In the following description, other light-emitting modulestructures will be described.

FIG. 6 is a cross-sectional view of a light-emitting module structure200 depicted according to various embodiments of the present invention.The difference between the light-emitting module structure 200 and thelight-emitting module structure 100 shown in FIG. 1 is that thelight-emitting module structure 200 further includes a transparent gluelayer 134 on the upper surface 132 of the light-guiding layer 130.

As shown in FIG. 6, the transparent glue layer 134 covers the uppersurface 132 of the light-guiding layer 130, and the transparent gluelayer 134 fills the recesses 240 a and 240 b. The transparent glue layer134 in the recesses 240 a and 240 b has protruded glue accumulationregions 134 a and 134 b. The glue accumulation regions 134 a and 134 bcan improve the light extraction efficiency of the light-emitting modulestructure 200 and increase the brightness of the light-emitting modulestructure 200. In some embodiments, the glue accumulation regions 134 aand 134 b respectively has thicknesses H₃ and H₄ from about 5 to 20 μm.In some embodiments, the transparent glue layer 134 and thelight-guiding layer 130 may be made of a same material, and the uppersurface 136 of the transparent glue layer 134 is a reflection surface ora refraction surface. In such a case, the upper surface 132 of thelight-guiding layer 130 may not be a reflection surface or a refractionsurface. In some embodiments, at least one reflection structure 160 amay further be disposed on a part of the upper surface 136 of thetransparent glue layer 134, and the location, quantity, and size of thereflection structure 160 are not limited to those shown in FIG. 6.

FIGS. 7A-7D are photos of a light-emitting module structure according tosome embodiments of the present invention. FIG. 7A is a photo of thelight-emitting module structure where the upper surface 132 of thelight-guiding layer 130 has no recess 140. FIG. 7B is a photo of thelight-emitting module structure where the upper surface 132 of thelight-guiding layer 130 has a plurality of first V-shaped trenchesextending along the first direction d1. FIG. 7C is a photo of thelight-emitting module structure where the upper surface 132 of thelight-guiding layer 130 has a plurality of first V-shaped trenchesextending along the first direction d1 and a plurality of secondV-shaped trenches extending along a second direction d2. FIG. 7D is aphoto of the light-emitting module structure shown the FIG. 7C where therecesses of the light-emitting module structure have glue accumulationregions. From FIGS. 7A-7D, it is clear that the light-emitting modulestructure shown in FIG. 7D has the best brightness and uniformity.However, the light-emitting module structure shown in FIG. 7A having norecess has the worst brightness and uniformity. In addition, comparedwith the light-emitting module structure shown in FIG. 7B, thelight-emitting module structure shown in FIG. 7C has a better brightnessand uniformity.

FIG. 8 is a cross-sectional view of a light-emitting module structure300 depicted according to some embodiments of the present invention. Thedifference between the light-emitting module structure 300 and thelight-emitting module structure 100 shown in FIG. 1 is that the recesses140 in the light-emitting module structure 300 are not disposed abovethe light-emitting diodes 120. More particularly, the recesses 140 inthe light-emitting module structure 300 may be disposed between any twoadjacent light-emitting diodes 120 but not overlapping with anylight-emitting diode 120. For example, as shown in FIG. 8, a recess 140b is between the light-emitting diodes 120 a and 120 b but notoverlapping with the light-emitting diode 120 a or 120 b. It should beunderstood that although FIG. 1 merely depicts two light-emitting diodes120 a and 120 b and three recesses 140 a, 140 b, and 140 c, the presentinvention is not limited thereto. A suitable number of light-emittingdiodes 120 and recesses 140 may be selected depending on the needed.Besides, although FIG. 8 depicts that the recess 140 b is aligned with acrosstalk resistant structure 150, in other embodiments, the recess 140b may not be aligned with the crosstalk resistant structure 150.

FIG. 9 is a cross-sectional view of a light-emitting module structure400 depicted according to some embodiments of the present invention. Thedifference between the light-emitting module structure 400 and thelight-emitting module structure 100 shown in FIG. 1 is that thelight-emitting module structure 400 further includes a plurality ofbottom reflection structures 152, 156, and a plurality of bottomscattering structures 154 disposed on the substrate 110, and disposedbetween two adjacent light-emitting diodes 120 a and 120 b.

As shown in FIG. 9, the bottom scattering structures 154 and the bottomreflection structures 152, 156 are disposed between two adjacentlight-emitting diodes 120 a, 120 b, and two opposite sides of thecrosstalk resistant structure 150 both have the bottom scatteringstructures 154 and the bottom reflection structures 152 and 156. In someembodiments, the bottom reflection structures 152 are respectivelyadjacent to the light-emitting diodes 120 a, 120 b, the bottomreflection structures 156 are adjacent to the crosstalk resistantstructure 150, and the bottom scattering structures 154 are between thebottom reflection structure 152 and the bottom reflection structure 156.In some embodiments, the light-emitting module structure 400 may onlyhave the bottom reflection structures 152 or the bottom reflectionstructures 156 but has no bottom scattering structures 154. In someembodiments, the light-emitting module structure 400 may only have thebottom scattering structures 154 but has no bottom reflection structures152 or bottom reflection structures 156. In some embodiments, the bottomreflection structures 152, 156 include but not limited to mirror metalmaterials, such as silver, aluminum. In some embodiments, the bottomscattering structures 154 include but not limited to titanium dioxide,silicon dioxide, or a combination thereof.

It should be understood that suitable arrangements, quantities and sizeof the bottom scattering structures 154 and the bottom reflectionstructures 152, 156 may be selected depending on the needed, which wouldnot be described hereinafter, and FIG. 9 is merely an example. Inaddition, the shape, location, and quantity of recesses may be the sameas any embodiment described above, which would not be describedhereinafter.

FIG. 10 is a cross-sectional view of a light-emitting module structure500 depicted according to some embodiments of the present invention. Thedifference between the light-emitting module structure 500 and thelight-emitting module structure 400 shown in FIG. 9 is that thelight-emitting module structure 500 further includes phosphor layers170, 172 a and 172 b. The phosphor layer 170 is on the upper surface 132of the light-guiding layer 130, and the phosphor layers 172 a, 172 b areon the light-emitting diodes 120 a, 120 b, respectively.

As shown in FIG. 10, the phosphor layer 170 covers the upper surface 132of the light-guiding layer 130 and the recesses 140 a, 140 b, thephosphor layer 172 a covers the light-emitting diode 120 a, and thephosphor layer 172 b covers the light-emitting diode 120 b. In someembodiments, the phosphor layer 170 may be replaced by a quantum dotlayer. In other embodiments, the quantum dot layer may be a quantum dotin glass tube.

In some embodiments, one of the phosphor layers 172 a and 172 b may beomitted. In other embodiments, the light-emitting module structure 500may merely have the phosphor layer 170 but have no phosphor layer 172 aor 172 b. In some embodiments, the phosphor layers 170, 172 a, 172 b mayrespectively include at least one phosphor. For example, the phosphorlayer 170 may include red, green, and blue phosphors. In someembodiments, the phosphor layers 172 a, 172 b may include phosphors withdifferent colors. For example, the phosphor layer 172 a includes the redphosphor, and the phosphor layer 172 b includes the green phosphor.

FIG. 11 is a cross-sectional view of a light-emitting module structure600 depicted according to some embodiments of the present invention.Referring to FIG. 11, the light-emitting module structure 600 includes asubstrate 110, a plurality of light-emitting diodes (e.g.,light-emitting diodes 120 a, 120 b) and a light-guiding layer 130. Thelight-emitting diodes 120 a, 120 b are disposed on the substrate 110.The light-guiding layer 130 is disposed on the substrate 110 and coversthe light-emitting diodes 120 a and 120 b. The upper surface 132 of thelight-guiding layer 130 has recesses 140 a and 140 b. The light-emittingmodule structure 600 may further include other elements, which will bedescribed below.

In some embodiments, the light-emitting module structure 600 furtherincludes conductive pads 112 and conductive structures 118. Thelight-emitting diodes 120 are electrically connected to the conductivestructures 118 via the conductive pads 112. In some embodiments, thelight-emitting module structure 600 further includes an insulationmaterial (not shown in FIG. 11) below the substrate 110. FIGS. 12A-12Bare partially enlarged schematic views of a light-emitting modulestructure depicted according to some embodiments of the presentinvention. Referring to FIGS. 12A-12B, in some embodiments, theconductive pads 112 are between the substrate 110 and the light-emittingdiodes 120. A pit 114 is between the conductive pads 112, and a concavestructure 116 is in the pit 114. In some embodiments, the concavestructure 116 includes mirror metal material, titanium dioxide, silicondioxide, or a combination thereof. In some embodiments, the section ofthe concave structure 116 may be but not limited to U-shaped (FIG. 12A)or V-shaped (FIG. 12B). As shown in FIGS. 12A-12B, light emitted fromthe light-emitting diodes 120 may be reflected at the surfaces of theconcave structure 116, and the light may be gathered and passed upwardto improve the brightness of the light-emitting module structure.

Please refer to FIG. 11 again. In some embodiments, the light-emittingmodule structure 600 further includes a plurality of scatteringparticles 158, and the scattering particles 158 may be distributedanywhere within the light-guiding layer 130. In some embodiments, thescattering particles 158 include but not limited to titanium dioxide,silicon dioxide, or a combination thereof.

In some embodiments, the light-emitting module structure 600 furtherincludes at least one reflection structure 160 on a part of the uppersurface 132 of the light-guiding layer 130, and the reflection structure160 has a reflection surface immediately neighboring the upper surface132 of the light-guiding layer 130.

In some embodiments, the light-emitting module structure 600 furtherincludes crosstalk resistant structures 150 a, 150 b, bottom reflectionstructures 152 and bottom scattering structures 154 on the substrate110. The crosstalk resistant structures 150 a, 150 b are on the bottomreflection structures 152, the crosstalk resistant structure 150 a isdisposed on the side of the light-emitting diode 120 a far away from thelight-emitting diode 120 b, and the crosstalk resistant structure 150 bis disposed on the side of the light-emitting diode 120 b far away fromthe light-emitting diode 120 a. In some embodiments, the light-emittingmodule structure 600 further includes at least one crosstalk resistantstructure between the light-emitting diodes 120 a and 120 b (as shown inFIG. 1). In some embodiments, the bottom reflection structures 152 andthe bottom scattering structures 154 are disposed between thelight-emitting diodes 120 a and 120 b, between the crosstalk resistantstructure 150 a and the light-emitting diode 120 a, and between thecrosstalk resistant structure 150 b and the light-emitting diode 120 b.

As shown in FIG. 11, in some embodiments, a light L1 is scattered and/orreflected at the crosstalk resistant structures 150 a, 150 b. Therefore,the light L1 would not cross talk with the light emitted from thelight-emitting diode (not shown) on the other side of the crosstalkresistant structure 150 a, such that the local dimming issue may befurther improved. In some embodiments, a light L2 transmitting in thelight-guiding layer 130 is scattered by the scattering particles 158,such that the light may be distributed more uniformly. In someembodiments, a light L3 is reflected by the recess 140 a on the uppersurface 132 of the light-guiding layer 130, such that the light L3 maybe transmitted further in the light-guiding layer 130. In someembodiments, a light L4 is reflected at the upper surface 132 of thelight-guiding layer 130, the light L4 is then transmitted to the bottomreflection structures 152 and be reflected again, such that the light L4may be transmitted further in the light-guiding layer 130. Accordingly,the light-emitting module structure can maintain a good brightness anduniformity while enlarging the distances between the light-emittingdiodes 120, such that the usage amount of light-emitting diodes can bereduced. In some embodiments, when a light L5 is transmitted to thereflection structure 160, the reflection surface 162 reflects the lightL5 to the bottom scattering structures 154, and the light L5 is then bescattered, thus obtaining a uniform light.

FIG. 13 is a cross-sectional view of a light-emitting module structure700 depicted according to some embodiments of the present invention. Thedifference between the light-emitting module structure 700 and thelight-emitting module structure 600 shown in FIG. 11 is that the bottomreflection structures 152 and bottom scattering structures 154 of thelight-emitting module structure 700 is disposed under the substrate 110,and the conductive structures 118 are disposed in the substrate 110.

In some embodiments, the substrate 110 of the light-emitting modulestructure 700 directly contacts the light-guiding layer 130, and thesubstrate 110 is a transparent substrate. In the light-emitting modulestructure 700 shown in FIG. 13, the light emitted from thelight-emitting diodes 120 may be transmitted in the transparentsubstrate 110 and the light-guiding layer 130, and then be reflectedand/or scattered by the bottom reflection structures 152 and/or thebottom scattering structures 154. Therefore, the light transmission pathis changed and the transmitting distance is increased. For example,compared with the light L4 shown in FIG. 11, the light L4′ shown in FIG.13 may be transmitted further.

In some embodiments, the light-emitting module structure 700 furtherincludes a reflective insulation layer 180 under the bottom reflectionstructures 152 and the bottom scattering structures 154. In someembodiments, the reflective insulation layer 180 includes but notlimited to titanium dioxide, silicon dioxide, or a combination thereof.

FIG. 14 is a cross-sectional view of a light-emitting module structure800 depicted according to some embodiments of the present invention. Thedifference between the light-emitting module structure 800 and thelight-emitting module structure 600 shown in FIG. 11 is that thesubstrate 110 of the light-emitting module structure 800 has at leastone cavity (e.g., the cavities 190 a and 190 b), and the light-emittingdiodes (e.g., the light-emitting diodes 120 a and 120 b) arecorrespondingly disposed within the cavities. As shown in FIG. 14, thelight-emitting diodes 120 a, 120 b are respectively disposed within thecavities 190 a, 190 b, and the light-emitting diodes 120 a, 120 b areelectrically connected to the conductive structures 118 via theconductive pads 112 and conductive substrates 192. It should be notedthat, for simplifying the drawings, the crosstalk resistant structure150 b, the bottom reflection structures 152, and the bottom scatteringstructures 154 are omitted in FIG. 14. In fact, the light-emittingmodule structure 800 may also has the crosstalk resistant structures 150a, 150 b, the bottom reflection structures 152, and the bottomscattering structures 154, which are disposed as the embodiments shownin FIG. 11 or 13.

In some embodiments, the light-emitting diodes 120 a, 120 b may be chipsize package (CSP) light-emitting diodes or flip chip light-emittingdiodes. In some embodiments, the cavity 190 has a depth T₁, and theconductive substrate 192 has a height H₅. In some embodiments, the depthT₁ of the cavity 190 is smaller than the height H₅ of the conductivesubstrate 192. In some embodiments, the light-emitting module structure800 further includes phosphor layers 172 a, 172 b respectively coveringthe light-emitting diodes 120 a, 120 b. Applying the light-emittingmodule structure 800 shown in FIG. 14 to a back light unit (BLU) mayimprove the white light yield, pick-and-place yield, brightness, andoptical angle of the module.

As described above, according to embodiments of the present invention,through the optical designs of the light-guiding layer and the substrate(e.g., recesses and reflection structures on the upper surface of thelight-guiding layer, bottom reflection structures and bottom scatteringstructures on or under the substrate, and crosstalk resistant structuresbetween the light-emitting diodes, etc.), the light emitted from thelight-emitting diodes may be distributed more uniformly, such that thelight may be transmitted further in the light-guiding layer. Therefore,the light-emitting module structure of the present invention may reducethe usage amount of the light-emitting diodes. Further, thelight-emitting module structure of the present invention has smalleroptical distance (OD).

In addition, the recesses having glue accumulation regions therein canincrease the light extraction efficiency and thus improve the brightnessof the light-emitting module. The concave structure between thelight-emitting diodes and the substrate has a light-concentratingeffect, such that the light emitted from the light-emitting diodes canbe gathered and passed upward, to improve the brightness of thelight-emitting module.

Although the present invention has been described in considerable detailwith reference to certain embodiments thereof, other embodiments arepossible. Therefore, the spirit and scope of the appended claims shouldnot be limited to the description of the embodiments contained herein.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the structure of the presentinvention without departing from the scope or spirit of the invention.In view of the foregoing, it is intended that the present inventioncover modifications and variations of this invention provided they fallwithin the scope of the following claims.

What is claimed is:
 1. A light-emitting module structure, comprising: asubstrate; a plurality of light-emitting diodes disposed on thesubstrate; and a light-guiding layer covering the light-emitting diodes,wherein the light-guiding layer has an upper surface, the upper surfacehas a plurality of recesses, and each of the recesses is between thelight-emitting diodes.
 2. The light-emitting module structure of claim1, further comprising a plurality of crosstalk resistant structuresdisposed on the substrate, wherein each of the crosstalk resistantstructures is between the light-emitting diodes.
 3. The light-emittingmodule structure of claim 2, further comprising a plurality ofscattering structures disposed on the substrate, wherein each of thescattering structures is arranged between two adjacent ones of thelight-emitting diodes and disposed on two opposite sides of each of thecrosstalk resistant structures.
 4. The light-emitting module structureof claim 3, further comprising a plurality of reflection structuresdisposed on the substrate, wherein each of the reflection structures isarranged between two adjacent ones of the light-emitting diodes anddisposed on two opposite sides of each of the crosstalk resistantstructures.
 5. The light-emitting module structure of claim 2, whereinthe light-emitting diodes are arranged as a regular hexagon, and each ofthe crosstalk resistant structures is positioned at a center of theregular hexagon.
 6. The light-emitting module structure of claim 2,wherein the crosstalk resistant structures comprise a plurality of conesor a plurality of cylinders, and each of the crosstalk resistantstructures has a height that is greater than or equal to a height of thelight-emitting diodes.
 7. The light-emitting module structure of claim1, further comprising at least one reflection structure disposed on apart of the upper surface of the light-guiding layer, wherein thereflection structure has a reflection surface immediately neighboringthe upper surface, and the reflection surface is a scattering reflectionsurface or a mirror reflection surface.
 8. The light-emitting modulestructure of claim 1, wherein the recesses comprise a plurality of firstV-shaped trenches extending along a first direction.
 9. Thelight-emitting module structure of claim 8, wherein the recesses furthercomprise a plurality of second V-shaped trenches extending along asecond direction, the second direction is different from the firstdirection, the first V-shaped trenches intersect with the secondV-shaped trenches to form a plurality of intersections.
 10. Thelight-emitting module structure of claim 1, further comprising atransparent glue layer on the upper surface of the light-guiding layer,wherein the transparent glue layer fills the recesses.
 11. Thelight-emitting module structure of claim 10, wherein the transparentglue layer in the recesses has a protruding glue accumulation portion.12. The light-emitting module structure of claim 1, wherein thesubstrate has at least one cavity, and at least one of thelight-emitting diodes is correspondingly disposed in the at least onecavity, wherein the light-emitting diodes are chip size packagelight-emitting diodes.